Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated terms size impurity position. The electron, heavy hole free bound excitons allowed eigen-values corresponding eigen-functions obtained numerically solving one-dimensional time-independent Schrödinger equation. Within parabolic band effective mass approximations, calculations made considering coupling electron n-th conduction subband m-th valence under impacts results show clearly that energy, energy decreasing behavior according to for both cases. Moreover, susceptibility associated transition is strongly red-shift (blue-shifted) with enhancing (impurity position).